IC FDC6420C

12.00

FDC6420C

These N & P−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been  especially tailored to minimize on−state resistance and yet maintain superior switching performance.

 

Category:

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.

Features
  •  Q1 3.0 A, 20 V
    ♦  RDS(on) = 70 m @ VGS = 4.5 V
    ♦  RDS(on) = 95 m @ VGS = 2.5 V
  • Q2 −2.2 A, −20 V
    ♦ RDS(on) = 125 m @ VGS = −4.5 V
    ♦ RDS(on) = 190 m @ VGS = −2.5 V
  • Low Gate Charge
  • High Performance Trench Technology for Extremely Low RDS(on)
  • SUPERSOT−6 Package: Small Footprint (72% Smaller than SO−8); Low Profile (1 mm Thick)
  • This is a Pb−Free Device

Applications

  • DC−DC Converter
  • Load Switch
  • LCD Display Inverter

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